ATD Reliability Engineer - High Voltage GaN - Texas, Dallas

The announced job offer is made public by the firm: Peyton Resource Group and it was included in jobs list the date of: 2022-10-22 in the website greenenergyjobsonline.com.

It is announced that they have a job offer at the category of Engineering and the jobs location is in the state of Texas at the city Dallas, in the country US - at this current ZipCode: 75215

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OPEN ON SALARY, DEPENDS ON EXPERIENCE

Will not accept College Research Assistants with no work experience

About the Job

This reliability engineer position is focused on development, characterization and optimization of high voltage gallium nitride (GaN) power devices. As part of Company's analog technology development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. Experience in development of GaN devices for normally-off operation is desired. The scope of the job includes, but not limited to:

Reliability characterization, accelerated lifetime testing and modeling of GaN devices

Collaboration with design and applications engineers to meet device reliability requirements

GaN device simulations (TCAD), reliability test structure design & layout

Collaboration with fab/manufacturing engineers to ensure device manufacturability

Failure root-cause investigation for device/process/reliability/yield improvements

The ideal candidate is expected to have a strong understanding of the following

Reliability statistics, characterization methodologies, and lifetime modeling

High voltage power FET and other relevant analog device physics

Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics

Electrical and materials characterization methodologies and statistical data analysis

Strong hands-on lab experience and excellent problem solving skills are also needed. Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams.

Minimum Requirements:

MS in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree

5 years of experience in GaN-based device reliability characterization and modeling

Preferred Qualifications:

PhD in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree

10 years of experience in GaN-based device development

Experience in normally-off GaN device development for high power switching applications

Demonstrated strong analytical and problem-solving skills

Strong verbal and written communication skills

Ability to work in teams and collaborate effectively with people in different functions

Strong time management skills that enable on-time project delivery

Demonstrated ability to build strong, influential relationships

Ability to work effectively in a fast-paced and rapidly changing environment

Ability to take the initiative and drive for results

Sound decision-making capabilities and the ability to prioritize tasks and adapt accordingly